revision no : 3 2008 .9 .10 1/2 PG05DXTEV dim millimeters a a1 b1 c tesv 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 b d h j b1 b d a a1 c c j h 1 2 3 5 4 p p p5 + _ + _ + _ + _ + _ + _ + _ 1. (tvs) d1 cathode 2. common anode 3. (tvs) d2 cathode 4. (tvs) d3 cathode 5. (tvs) d4 cathode protection in portable electronics applications. features ? 30 watts peak pulse power (tp=8/20 s) ? transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) ? small package for use in portable electronics. ? suitable replacement for multi-layer varistors in esd protection applications. ? protects one i/o or power line. ? low clamping voltage. ? low leakage current. applications ? cell phone handsets and accessories. ? microprocessor based equipment. ? personal digital assistants (pda?s) ? notebooks, desktops, & servers. ? portable instrumentation. ? pagers peripherals. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 30 w junction temperature t j 150 ? storage temperature t stg -55 ?- 150 ? characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5 v reverse breakdown voltage v br i t =1ma 6.47 - 7.14 v reverse leakage current i r v rwm =4.3v - - 1 a clamping voltage v c i pp =1.6a, t p =8/20 ? - - 13 v junction capacitance c j v r =0v, f=1mhz - 12 15 pf marking 123 4 5 1 2 3 4 5 d1 d2 d3 d4 te type name lot no. semiconductor technical data tvs diode array for esd protection in portable electronics
2008. 9. 10 2/2 PG05DXTEV revision no : 3 non-repetitive peak pulse power vs. pulse time pulse duration t p ( s) 1 100 10 peak pulse power p p ? p ? (w) 10 100 1k peak pulse power 8/20us average power waveform parameters : tr=8 s e -t td=20 s td=lpp/2 rated power or i pp (%) 0 110 70 50 25 0 power deration curve 75 100 125 150 10 20 30 40 80 90 50 100 60 ambient temperature ta ( c) peak pulse current i pp (%) 0 110 70 10 5 0 time ( s) pulse waveform 15 20 25 30 10 20 30 40 80 90 50 100 60 capacitance c j (pf) 0 2 1 0 reverse voltage v r (v) c j - v r 345 2 4 8 6 10 12
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